AlN Substrate (200 W/(m·k) )
Catalog NO.: AIMRSE-ELE-005 Category: Ceramic Substrates (AlN/Al2O3)
Aluminum Nitride (AlN) is a prominent wide-bandgap semiconductor composed of a stoichiometric 1:1 ratio of aluminum and nitrogen atoms. Due to its unique physical and chemical characteristics, it has emerged as a critical material for the development of next-generation electronic and optoelectronic devices.
| Density | 3.3 g/cm3 |
| Color | Beige |
| Surface Roughness | 0.2 - 0.75 μm |
| Camber | ≤ 3% |
| Coefficient of Thermal Expansion | 4-6 10-6/°C |
| Bending Strength | ≥ 350 Mpa |
| Dielectric Constant | 8-9 1MHz |
| Dielectric Strength | ≥ 17 kv/mm |
| Resistivity | ≥ 1014 Ω·cm |
| Thermal Conductivity | 200 W/(m·k) |
◈ Wide Bandgap (6.1 eV): Enables high-power and high-frequency operation in extreme thermal conditions.
◈ Superior Heat Dissipation: Industry-leading thermal conductivity that outperforms standard semiconductors for efficient cooling.
◈ Environmental Resilience: Chemically stable and corrosion-resistant, even when exposed to high-heat cycles.
◈ Piezoelectric Versatility: Capable of precise electromechanical conversion for advanced sensing and actuation technology.
High-Power Electronics: Ideal for HEMTs and Schottky diodes requiring high breakdown voltage and heat dissipation.
RF/Microwave: Low-loss substrates for high-frequency amplifiers and RF filters.
UV Optoelectronics: Optimized for UV-LEDs and laser diodes due to wide-bandgap characteristics.
Thermal Management: High-conductivity heat spreaders for high-density power modules.
SAW Devices: Exploits piezoelectricity for telecommunication filters and frequency control.
MEMS/Sensors: High-performance sensing and actuation for micro-scale systems.
Automotive (EV): High-thermal-path substrates for EV inverters and power conversion units.
Aerospace/Defense: Robust electronics for high-reliability components in harsh environments.
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