Plasma Doping System
Catalog NO.: AIMRSE-NRDE-056 Category: Nanotechnology R&D Equip
Plasma Doping System is a 12-inch plasma immersion ion implantation system (plasma doping system). It is used for high-dose, low-energy ion implantation doping for silicon devices, including CMOS device doping, hydrogen passivation, and ultra-shallow junction doping. It is also effective for doping 3D structures.
◈ High-precision energy and dose control systems.
◈ High-precision uniformity control systems.
◈ Stable delivery system and excellent process flow.
◈ Advanced high-dose & low-energy ion implantation capabilities.
Integrated circuit.
Contact Form
