Silicon Nitride Substrate
Catalog NO.: AIMRSE-ELE-008 Category: Ceramic Substrates (AlN/Al2O3)
Silicon Nitride Substrate is designed to thrive where traditional ceramics fail. This substrate provides the ultimate foundation for components facing intense heat, high pressure, and corrosive environments. Its superior reliability makes it indispensable for the next generation of high-power semiconductor packaging and high-stress industrial systems.
| Main Content | Si3N4 |
| Density | ≥ 3.17 g/cm3 |
| Color | Grey |
| Surface Roughness | ≤ 0.8 μm |
| Camber | ≤ 3% |
| Coefficient of Thermal Expansion | ≤ 2.7 10-6/K(RT-400°C) |
| Bending Strength | ≥ 700 Mpa |
| Breakdown Strength | ≥ 20 kv/mm |
| Fracture Toughness | ≥ 6.5 Mpa.m1/2 |
| Vickers Hardness | ≥ 13 Gpa |
| Dielectric Constant | 7.8 1MHz |
| Resistivity | ≥ 1014 Ω·cm |
| Thermal Conductivity | ≥ 80 W/(m·k) |
◈ Thermal Stability: Maintains structural integrity under extreme high-temperature processing.
◈ High Toughness: Exceptional mechanical strength and hardness; resistant to wear and impact.
◈ Electrical Insulation: Superior insulating properties for critical circuit isolation.
◈ Chemical Inertness: Highly resistant to corrosion in aggressive chemical environments.
◈ Low Thermal Expansion: Minimizes thermal stress and prevents cracking during temperature fluctuations.
◈ Dielectric Excellence: Optimized for high-performance electronic and optoelectronic use.
Electronics: High-reliability semiconductor packaging and integrated circuits.
Aerospace & Automotive: Engine components subjected to extreme heat and pressure.
Optoelectronics: Precision optical windows, lenses, and laser waveguides.
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