4-inch Conductive Silicon Carbide Substrate, D Grade
Brand: AIMRSE
Catalog Number
AIMRSE-ECM-WM-2
Category
Wafer materials
X
Description
Economical conductive SiC wafer for early-stage power device research, offering good crystal quality at lower cost compared to automotive-grade material.
| Diameter (mm): | 99.5–100.0 |
| Thickness (μm): | 350±25 |
| Off-Axis Angle: | 4.0°±0.5° toward <11-20> |
| Crystal Polytype: | 4H |
| Micropipe Density (cm⁻²): | ≤15 |
| Resistivity: | 0.015–0.028 Ω·cm |
| Primary Flat Direction: | Parallel to {10-10} ±5.0° |
| Primary Flat Length (mm): | 32.5±2.0 |
| Edge Exclusion (mm): | 3 |
| Total Thickness Variation (μm): | ≤15 |
| Warp (μm): | ≤40 |
| Bow (μm): | ≤25 |
| Surface Roughness Ra (nm): | ≤1 (Polish), ≤0.2 (CMP) |
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