Power Device
Power semiconductors are the fundamental building blocks of modern energy efficiency. As global demand for energy grows, the need for efficient power conversion, management, and distribution becomes critical. AIMRSE provides a comprehensive portfolio of power devices engineered to minimize conduction and switching losses, enabling higher power density and reliability in demanding environments.
Our product lineup bridges the gap between traditional silicon-based technologies and next-generation Wide Bandgap (WBG) materials. From robust IGBTs driving industrial motors to ultra-fast GaN HEMTs powering data centers, we offer solutions that address the specific thermal and electrical challenges of your application.
Product Categories
Our Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) utilize advanced superjunction and trench technologies. Designed for low-to-medium voltage applications (40V to 900V), they offer ultra-low On-Resistance (Rds(on)) to minimize conduction losses. The optimized gate charge (Qg) characteristics allow for high-frequency switching, making them ideal for Switched Mode Power Supplies (SMPS), lighting ballasts, and battery management systems. We provide a variety of packages including TO-220, TO-247, and DFN for compact designs.
View MOSFETs →Insulated Gate Bipolar Transistors (IGBTs) combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors. Covering a voltage range from 600V to 6.5kV, our IGBTs feature Trench Field Stop technology, providing a superior trade-off between saturation voltage (Vce(sat)) and switching turn-off losses. These are the workhorses for high-power applications such as Uninterruptible Power Supplies (UPS), industrial motor drives, and traction inverters where short-circuit ruggedness is paramount.
View IGBTs →For applications demanding the highest efficiency and power density, we offer Silicon Carbide (SiC) and Gallium Nitride (GaN) devices. SiC MOSFETs operate effectively at higher temperatures and voltages (up to 1700V) with minimal reverse recovery charge, ideal for EV charging and renewable energy. GaN HEMTs enable ultra-high switching frequencies (MHz range) in compact footprints, revolutionizing AC-DC adapters and telecom rectifiers. These materials significantly reduce the size of passive components (inductors and capacitors) in the system.
Explore WBG Tech →Technical Comparison & Selection Guide
Selecting the correct power semiconductor is a balance of switching frequency, voltage requirements, and thermal management capabilities. The table below outlines the operational sweet spots for each technology.
| Parameter | Silicon MOSFET | IGBT | Silicon Carbide (SiC) | Gallium Nitride (GaN) |
|---|---|---|---|---|
| Voltage Range | Low to Medium (20V - 900V) | High (600V - 6.5kV) | Medium to High (650V - 3.3kV) | Low to Medium (100V - 900V) |
| Switching Freq. | Medium (up to 1MHz) | Low (2kHz - 50kHz) | High (50kHz - 500kHz) | Very High (100kHz - 10MHz+) |
| Thermal Capability | Good (up to 150°C) | Good (up to 150°C/175°C) | Excellent (up to 200°C) | Moderate (Packaging limited) |
| Primary Benefit | Cost-effective, mature technology | High current handling, ruggedness | High voltage efficiency, thermal stability | Highest density, fastest switching |
Application Ecosystem
Power devices do not operate in isolation. They are part of a broader ecosystem requiring effective thermal management and electromagnetic compatibility (EMC) solutions. AIMRSE provides a holistic approach to system design.
Automotive & New Energy Vehicles
Our AEC-Q101 qualified IGBTs and SiC modules are critical for traction inverters, On-Board Chargers (OBC), and DC-DC converters in electric vehicles. They ensure minimal energy loss during battery conversion, extending vehicle range.
Industrial Automation & UPS
Robust IGBT modules power variable frequency drives (VFDs) and servo motors, enabling precise control in automated manufacturing. In UPS systems, our devices ensure stable power delivery during grid fluctuations.
Thermal & EMC Integration
High-speed switching generates heat and EMI. We recommend pairing our power devices with our Thermal Interface Materials (TIMs) and EMI Absorbers to ensure regulatory compliance and device longevity.
Reliability & Quality Assurance
Our commitment to quality ensures that every device meets rigorous industry standards. All automotive-grade products are qualified according to AEC-Q101 standards. We perform extensive reliability testing including High Temperature Reverse Bias (HTRB), High Humidity High Temperature Reverse Bias (H3TRB), and Intermittent Operating Life (IOL) tests. This ensures our power devices can withstand the harsh environmental conditions found in automotive and industrial applications.
Custom Design Support
Beyond discrete components, we offer support for custom power modules. Our engineering team assists with topology selection, thermal simulation, and gate driver integration. We provide comprehensive SPICE models and evaluation boards to accelerate your prototyping phase.
Contact Engineering Support →Frequently Asked Questions
What is the advantage of SiC over Silicon IGBTs in solar inverters?
Do I need special gate drivers for GaN devices?
How do you handle thermal management for high-power modules?
Are your products compliant with RoHS and REACH standards?
For optimal application fit, we recommend reviewing latest specifications and validating within your design. Our team is available for technical consultation.
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