4-inch Semi-Insulating Silicon Carbide Substrate, Z Grade
Brand: AIMRSE
Catalog Number
AIMRSE-ECM-WM-7
Category
Wafer materials
X
Description
High-purity semi-insulating substrate serving as foundation for high-power microwave and millimeter-wave transistors requiring minimal RF loss.
| Diameter (mm): | 99.5–100.0 |
| Thickness (μm): | 500±15 |
| Off-Axis Angle: | <0001> ±0.5° |
| Crystal Polytype: | 4H |
| Micropipe Density (cm⁻²): | ≤1 |
| Resistivity: | ≥1×10¹⁰ Ω·cm |
| Primary Flat Direction: | {10-10} ±5.0° |
| Primary Flat Length (mm): | 32.5±2.0 |
| Edge Exclusion (mm): | 3 |
| Total Thickness Variation (μm): | ≤5 |
| Warp (μm): | ≤30 |
| Bow (μm): | ≤15 |
| Surface Roughness Ra (nm): | ≤1 (Polish), ≤0.2 (CMP) |
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