6-inch Conductive Silicon Carbide Epitaxial Wafer, Z Grade
Brand: AIMRSE
Catalog Number
AIMRSE-ECM-WM-11
Category
Wafer materials
X
Description
Epitaxially grown SiC layer on conductive substrate, forming the active region of SiC Schottky diodes and MOSFETs used in onboard chargers and traction inverters.
| Diameter (mm): | 149.5–150.0 |
| Crystal Polytype: | 4H |
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