650V GaN Power Transistor (FET) VGS8V@270mΩ,25°C
Brand: AIMRSE
Catalog Number
AIMRSE-Cascode-17
Category
GaN
X
Description
Features
1.Easy to use, compatible with standard gate drivers
2.Excellent QG x RDS(on) figure of merit (FOM)
3.Low QRR, no free-wheeling diode required
4.Low switching loss
5.RoHS compliant and Halogen-free
Applications
1.High efficiency power supplies
2.Telecom and datacom
3.Automotive
4.Servo motors
| VDS(V): | 900 |
| ID(A): | 9.4 |
| VGS(TH) Min(V): | 3 |
| VGS(TH) Max(V): | 5 |
| Qg Typ(nC): | 15 |
| Package: | TO-220 |
| RDS(ON) Typ(mΩ): | 270 |
| VGS(TH) Typ(V): | 4 |
| Qrr Typ(nC): | 28 |
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