GaN Power Transistor (FET) 700V180mΩ
Brand: AIMRSE
Catalog Number
AIMRSE-Cascode-2
Category
GaN
X
Description
Features
Easy to use, compatible with standard gate drivers
Excellent QG × RDS(on) figure of merit (FOM)
Low QRR, no free-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
Qualified according to JEDEC criteria
Product Summary
VDSS: 700 V
RDS(on), typ: 180 mΩ
QG, typ: 5.6 nC
QRR, typ: 26 nC
Applications
High efficiency power supplies
High efficiency USB PD adapters
Other consumer electronics
| VDS(V): | 700 |
| ID(A): | 10.4 |
| VGS(TH) Min(V): | 1.1 |
| VGS(TH) Max(V): | 2.5 |
| Qg Typ(nC): | 15.8 |
| Package: | DFN8×8-8L |
| RDS(ON) Typ(mΩ): | 180 |
| VGS(TH) Typ(V): | 1.8 |
| Qrr Typ(nC): | 32 |
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