GaN Power Transistor (FET) 700V180mΩ

GaN Power Transistor (FET) 700V180mΩ

Brand: AIMRSE

Catalog Number
AIMRSE-Cascode-2
Category
GaN
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Description

Features
Easy to use, compatible with standard gate drivers
Excellent QG × RDS(on) figure of merit (FOM)
Low QRR, no free-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
Qualified according to JEDEC criteria
Product Summary
VDSS: 700 V
RDS(on), typ: 180 mΩ
QG, typ: 5.6 nC
QRR, typ: 26 nC
Applications
High efficiency power supplies
High efficiency USB PD adapters
Other consumer electronics

VDS(V): 700
ID(A): 10.4
VGS(TH) Min(V): 1.1
VGS(TH) Max(V): 2.5
Qg Typ(nC): 15.8
Package: DFN8×8-8L
RDS(ON) Typ(mΩ): 180
VGS(TH) Typ(V): 1.8
Qrr Typ(nC): 32

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