Planar N-MOSFET 600V, 7A
Brand: AIMRSE
General Description:
CS7N60A4RC-G, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency. The
packageformis TO-252,whichaccordswiththe RoHSstandard. Features:
Fast Switching
LowONResistance(Rdson≤ 1.3Ω)
LowGateCharge (TypicalData: 25.3nC)
LowReversetransfer capacitances(Typical: 5.9pF)
100%SinglePulseavalancheenergyTest
HalogenFree
Qualified according to JEDEC criteria
Applications:
Power switchcircuitof adaptorandcharger.
| Polarity: | N |
| VDS(V): | 600 |
| ID(A): | 7 |
| RDS(ON)@VGS=10V Max(mΩ): | 1300 |
| VGS(TH) Min(V): | 2 |
| VGS(TH) Max(V): | 4 |
| Qg Typ(nC): | 25.3 |
| Ciss Typ(pF): | 1111 |
| Package: | TO-252 |
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