Planar N-MOSFET 600V, 7A

Planar N-MOSFET 600V, 7A

Brand: AIMRSE

Catalog Number
AIMRSE-MOSFET-098
Category
MOSFET
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Description

General Description:
CS7N60A4RC-G, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency. The
packageformis TO-252,whichaccordswiththe RoHSstandard. Features:
 Fast Switching
 LowONResistance(Rdson≤ 1.3Ω)
 LowGateCharge (TypicalData: 25.3nC)
 LowReversetransfer capacitances(Typical: 5.9pF)
 100%SinglePulseavalancheenergyTest
 HalogenFree
 Qualified according to JEDEC criteria
Applications:
Power switchcircuitof adaptorandcharger.

Polarity: N
VDS(V): 600
ID(A): 7
RDS(ON)@VGS=10V Max(mΩ): 1300
VGS(TH) Min(V): 2
VGS(TH) Max(V): 4
Qg Typ(nC): 25.3
Ciss Typ(pF): 1111
Package: TO-252

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