Planar N-MOSFET 650V, 7A
Brand: AIMRSE
General Description:
CS7N65FA9RC-G, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency. The
packageformis TO-220F,whichaccordswiththeRoHS standard. Features:
FastSwitching
LowONResistance(Rdson≤1.4Ω)
LowGateCharge (TypicalData:23.3nC)
LowReversetransfercapacitances(Typical:5.2pF)
100%SinglePulseavalancheenergyTest
HalogenFree
Applications:
Power switchcircuitof adaptorandcharger.
| Polarity: | N |
| VDS(V): | 650 |
| ID(A): | 7 |
| RDS(ON)@VGS=10V Max(mΩ): | 1400 |
| VGS(TH) Min(V): | 2 |
| VGS(TH) Max(V): | 4 |
| Qg Typ(nC): | 23.3 |
| Ciss Typ(pF): | 1114 |
| Package: | TO-220F |
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