Planar N-MOSFET800V, 10A
Brand: AIMRSE
General Description:
CS10N80FA9D2, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency. The
packageformis TO-220F,whichaccordswiththeRoHS standard. Features:
Fast Switching
ESDImprovedCapability
LowGateCharge (TypicalData:65nC)
LowReversetransfer capacitances(Typical:25pF)
100%SinglePulseavalancheenergyTest
Applications:
Power switchcircuitof PCPOWER.
| Polarity: | N |
| VDS(V): | 800 |
| ID(A): | 10 |
| RDS(ON)@VGS=10V Max(mΩ): | 900 |
| VGS(TH) Min(V): | 2 |
| VGS(TH) Max(V): | 4 |
| Qg Typ(nC): | 65 |
| Ciss Typ(pF): | 2900 |
| Package: | TO-220F |
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