Planar N-MOSFET800V, 10A

Planar N-MOSFET800V, 10A

Brand: AIMRSE

Catalog Number
AIMRSE-MOSFET-108
Category
MOSFET
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Description

General Description:
CS10N80FA9D2, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency. The
packageformis TO-220F,whichaccordswiththeRoHS standard. Features:
 Fast Switching
 ESDImprovedCapability
 LowGateCharge (TypicalData:65nC)
 LowReversetransfer capacitances(Typical:25pF)
 100%SinglePulseavalancheenergyTest
Applications:
Power switchcircuitof PCPOWER.

Polarity: N
VDS(V): 800
ID(A): 10
RDS(ON)@VGS=10V Max(mΩ): 900
VGS(TH) Min(V): 2
VGS(TH) Max(V): 4
Qg Typ(nC): 65
Ciss Typ(pF): 2900
Package: TO-220F

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