SiC MOSFET 1200V, 160mΩ, 17A
Brand: AIMRSE
Product Summary
Built on CR Micro’s Gen 2 (G2) SiC MOSFET technology, this device delivers an optimal balance of high blocking voltage, low conduction loss, and ultra-fast switching performance. Designed for demanding automotive and industrial applications, it features excellent ruggedness and is AEC-Q101 qualified for automotive reliability.
Key Features
CR Micro Gen 2 (G2) SiC MOSFET Technology
High Blocking Voltage with Low On-Resistance (RDS(on))
High-Speed Switching Enabled by Low Input/Output Capacitances
Avalanche Ruggedness for Enhanced Reliability
Fast Intrinsic Body Diode with Rapid Reverse Recovery
AEC-Q101 Qualified (Automotive Grade)
Key Specifications
Drain-Source Voltage (VDS): 1200 V
Typical On-Resistance (RDS(on)): 160 mΩ
Continuous Drain Current (ID): 17 A
Applications
Solar Inverters
High-Voltage DC/DC Converters
On-Board Chargers (OBC) for Electric Vehicles
EV Charging Stations
| Polarity: | N |
| VDS(V): | 1200 |
| ID(A): | 17 |
| VGS(TH) Min(V): | 1.8 |
| VGS(TH) Max(V): | 3.6 |
| Qg Typ(nC): | 40.5 |
| Ciss Typ(pF): | 659 |
| Package: | TOLL |
| RDS(ON)@VGS=18V Typ(mΩ): | 132 |
| RDS(ON)@VGS=18V Max(mΩ): | 180 |
| RDS(ON)@VGS=15V Typ(mΩ): | 208 |
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