SiC MOSFET 1200V, 27mΩ, 70A
Brand: AIMRSE
Product Summary
Leveraging CR Micro’s fourth-generation (G4) SiC MOSFET technology, this device sets a new benchmark in high-efficiency power conversion. It combines ultra-low on-resistance with high blocking voltage, enabling superior performance in demanding industrial and automotive applications. The device is qualified according to JEDEC standards, ensuring robust reliability in harsh operating environments.
Key Features
CR Micro Gen 4 (G4) SiC MOSFET Technology
High Blocking Voltage with Exceptionally Low On-Resistance (RDS(on))
High-Speed Switching Enabled by Low Gate and Output Capacitances
Robust Avalanche Capability for Enhanced System Reliability
Fast Intrinsic Body Diode with Minimal Reverse Recovery Charge
Qualified to JEDEC reliability criteria
Key Specifications
Drain-Source Voltage (VDS): 1200 V
Typical On-Resistance (RDS(on)): 27 mΩ
Continuous Drain Current (ID): 70 A
Applications
Solar Inverters
High-Voltage DC/DC Converters
On-Board Chargers (OBC) for Electric Vehicles
EV Fast Charging Stations
| Polarity: | N |
| VDS(V): | 1200 |
| ID(A): | 70 |
| VGS(TH) Min(V): | 2 |
| VGS(TH) Max(V): | 4 |
| Qg Typ(nC): | 107 |
| Ciss Typ(pF): | 2461 |
| Package: | TO-247-4A |
| RDS(ON)@VGS=18V Typ(mΩ): | 27 |
| RDS(ON)@VGS=18V Max(mΩ): | 35 |
| RDS(ON)@VGS=15V Typ(mΩ): | 45 |
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