SiC MOSFET 1200V, 27mΩ, 70A
Brand: AIMRSE
Product Summary
Built on CR Micro’s fourth-generation (G4) SiC MOSFET technology, this device delivers industry-leading performance for high-efficiency, high-power applications. It integrates ultra-low on-resistance with high-voltage blocking capability, enabling compact, high-frequency designs with minimal losses. Fully AEC-Q101 qualified, it meets the stringent reliability requirements of automotive and industrial systems.
Key Features
CR Micro Gen 4 (G4) SiC MOSFET Technology
High Blocking Voltage with Ultra-Low On-Resistance (RDS(on))
High-Speed Switching Enabled by Low Input and Output Capacitances
Robust Avalanche Ruggedness for Enhanced Durability
Fast Intrinsic Body Diode with Efficient Reverse Recovery
AEC-Q101 Qualified for Automotive Applications
Key Specifications
Drain-Source Voltage (VDS): 1200 V
Typical On-Resistance (RDS(on)): 27 mΩ
Continuous Drain Current (ID): 70 A
Applications
Solar Inverters
High-Voltage DC/DC Converters
On-Board Chargers (OBC) for Electric Vehicles
EV Charging Infrastructure
| Polarity: | N |
| VDS(V): | 1200 |
| ID(A): | 70 |
| VGS(TH) Min(V): | 2 |
| VGS(TH) Max(V): | 4 |
| Qg Typ(nC): | 107 |
| Ciss Typ(pF): | 2461 |
| Package: | T2PAK |
| RDS(ON)@VGS=18V Typ(mΩ): | 27 |
| RDS(ON)@VGS=18V Max(mΩ): | 35 |
| RDS(ON)@VGS=15V Typ(mΩ): | 45 |
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