SiC MOSFET 1200V, 75mΩ, 25A
Brand: AIMRSE
Product Summary
Based on CR Micro’s fourth-generation (G4) SiC MOSFET technology, this device offers an optimal balance of high-voltage capability, low conduction losses, and ultra-fast switching performance. Designed for reliability in demanding environments, it is qualified according to JEDEC standards, making it suitable for industrial and automotive-grade power systems.
Key Features
CR Micro Gen 4 (G4) SiC MOSFET Technology
High Blocking Voltage with Low On-Resistance (RDS(on))
High-Speed Switching Enabled by Low Gate and Output Capacitances
Robust Avalanche Ruggedness for Reliable Operation Under Stress
Fast Intrinsic Body Diode with Efficient Reverse Recovery
Qualified to JEDEC reliability standards
Key Specifications
Drain-Source Voltage (VDS): 1200 V
Typical On-Resistance (RDS(on)): 75 mΩ
Continuous Drain Current (ID): 25 A
Applications
Solar Inverters
High-Voltage DC/DC Converters
On-Board Chargers (OBC) for Electric Vehicles
EV Charging Stations
| Polarity: | N |
| VDS(V): | 1200 |
| ID(A): | 25 |
| VGS(TH) Min(V): | 2 |
| VGS(TH) Max(V): | 4 |
| Qg Typ(nC): | 47 |
| Ciss Typ(pF): | 899 |
| Package: | TOLL |
| RDS(ON)@VGS=18V Typ(mΩ): | 75 |
| RDS(ON)@VGS=18V Max(mΩ): | 90 |
| RDS(ON)@VGS=15V Typ(mΩ): | 115 |
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