SiC MOSFET 750V, 14mΩ, 120A
Brand: AIMRSE
Product Summary
Built on CR Micro’s fourth-generation (G4) SiC MOSFET technology, this high-performance device delivers an exceptional combination of low on-resistance, high current capability, and ultra-fast switching—ideal for next-generation power conversion systems. With a 750 V blocking voltage and JEDEC-qualified reliability, it is engineered for robust operation in industrial and automotive applications.
Key Features
CR Micro Gen 4 (G4) SiC MOSFET Technology
High Blocking Voltage with Ultra-Low On-Resistance (RDS(on))
High-Speed Switching Enabled by Low Input and Output Capacitances
Robust Avalanche Ruggedness for Enhanced Durability
Fast Intrinsic Body Diode with Efficient Reverse Recovery
Qualified to JEDEC reliability standards
Key Specifications
Drain-Source Voltage (VDS): 750 V
Typical On-Resistance (RDS(on)): 14 mΩ
Continuous Drain Current (ID): 120 A
Applications
Switch-Mode Power Supplies (SMPS)
High-Voltage DC/DC Converters
On-Board Chargers (OBC) for Electric Vehicles
EV Charging Stations
| Polarity: | N |
| VDS(V): | 650 |
| ID(A): | 120 |
| VGS(TH) Min(V): | 2 |
| VGS(TH) Max(V): | 4 |
| Qg Typ(nC): | 125 |
| Ciss Typ(pF): | 3127 |
| Package: | TOLT |
| RDS(ON)@VGS=18V Typ(mΩ): | 14 |
| RDS(ON)@VGS=18V Max(mΩ): | 20 |
| RDS(ON)@VGS=15V Typ(mΩ): | 25 |
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