Silicon Carbide Schottky Diode 1200V, 27A, 108nC

Brand: AIMRSE

Catalog Number

AIMRSE-SIC-1

Category

SiC

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General Description / Product Summary
This product family represents CR Micro’s third-generation Silicon Carbide (SiC) Junction Barrier Schottky (JBS) diode, featuring lower forward voltage (VF) and delivering state-of-the-art performance.

Designed for high-frequency applications that demand high efficiency and high reliability, the device is fully qualified and manufactured on CR Micro’s in-house 6-inch SiC wafer production line in China.

Key Specifications
Repetitive Peak Reverse Voltage (VRRM): 1200 V
Forward Current (IF) @ TC = 145°C: 27 A
Total Charge (QC): 108 nC
Features
Low conduction loss due to low forward voltage (VF)
Extremely low switching loss enabled by minimal reverse recovery charge (QC)
High ruggedness with improved surge current capability
Industrial-standard quality and reliability
Applications
Solar inverters
EV charging systems
High-performance Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits