Silicon Carbide Schottky Diode 1200V, 3A, 12.8nC

Brand: AIMRSE

Catalog Number

AIMRSE-SIC-4

Category

SiC

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General Description / Product Summary
This product family represents CR Micro’s third-generation Silicon Carbide (SiC) Junction Barrier Schottky (JBS) diode, featuring lower forward voltage (VF) and delivering state-of-the-art performance.

Designed for high-frequency applications that demand high efficiency and high reliability, the device is fully qualified and manufactured on CR Micro’s in-house, high-volume 6-inch SiC wafer production line in China.

Key Specifications
Repetitive Peak Reverse Voltage (VRRM): 1200 V
Forward Current (IF) @ TC = 165°C: 3 A
Total Reverse Charge (QC): 12.8 nC
Features
Low conduction loss due to low forward voltage (VF)
Extremely low switching loss enabled by ultra-low reverse recovery charge (QC)
High ruggedness with enhanced surge current capability
Industrial-standard quality and reliability
Applications
Solar inverters
EV charging systems
High-performance Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits