Silicon N-Channel Power MOSFET 1200V 190W

Silicon N-Channel Power MOSFET 1200V 190W

Brand: AIMRSE

Catalog Number
AIMRSE-MOSFET-163
Category
MOSFET
Request a Quote
X
Description

General Description:
CS3N150 A0R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-263,
which accords with the RoHS standard.
Features:
 Fast Switching
 Low ON Resistance(Rdson≤6.5Ω)
 Low Gate Charge (Typical Data: 37.6nC)
 Low Reverse transfer capacitances(Typical:2.8 pF)
 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.

Polarity: N
VDS(V): 1500
ID(A): 3
RDS(ON)@VGS=10V Max(mΩ): 6500
VGS(TH) Min(V): 3
VGS(TH) Max(V): 5
Qg Typ(nC): 37.6
Ciss Typ(pF): 2036
Package: TO-263

Contact Form

Copyright © AIMRSE. All rights reserved.