Silicon N-Channel Power MOSFET 1200V 6A
Brand: AIMRSE
General Description:
CS6N120 A0R-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-263
which accords with the RoHS standard.
Features:
Fast Switching
Low ON Resistance(Rdson≤2.9Ω)
Low Gate Charge (Typical Data:13.1 nC)
Low Reverse transfer capacitances(Typical:.2.3 pF)
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Electric welder、Inverter.
| Polarity: | N |
| VDS(V): | 1200 |
| ID(A): | 6 |
| RDS(ON)@VGS=10V Max(mΩ): | 2900 |
| VGS(TH) Min(V): | 3 |
| VGS(TH) Max(V): | 5 |
| Qg Typ(nC): | 45 |
| Ciss Typ(pF): | 2333 |
| Package: | TO-263 |
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