Silicon N-Channel Power MOSFET 1200V

Silicon N-Channel Power MOSFET 1200V

Brand: AIMRSE

Catalog Number
AIMRSE-MOSFET-161
Category
MOSFET
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Description

General Description:
CS3N120 A0RZ-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-263,
which accords with the RoHS standard.
Features:
 Fast Switching
 Low ON Resistance(Rdson≤6.0Ω)
 Low Gate Charge (Typical Data:19.7 nC)
 Low Reverse transfer capacitances(Typical:2.2 pF)
 100% Single Pulse avalanche energy Test
 Halogen Free
Applications:
Electric welder、Inverter.

Polarity: N
VDS(V): 1200
ID(A): 3
RDS(ON)@VGS=10V Max(mΩ): 6000
VGS(TH) Min(V): 2
VGS(TH) Max(V): 4
Qg Typ(nC): 19.7
Ciss Typ(pF): 1006
Package: TO-263

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