Silicon N-Channel Power MOSFET 205W

Silicon N-Channel Power MOSFET 205W

Brand: AIMRSE

Catalog Number
AIMRSE-MOSFET-169
Category
MOSFET
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Description

General Description:
CS6N120 AKR-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-247
which accords with the RoHS standard.
Features:
 Fast Switching
 Low ON Resistance(Rdson≤2.9Ω)
 Low Gate Charge (Typical Data:13.1 nC)
 Low Reverse transfer capacitances(Typical:.2.3 pF)
 100% Single Pulse avalanche energy Test
 Halogen Free
Applications:
Electric welder、Inverter.

Polarity: N
VDS(V): 1200
ID(A): 6
RDS(ON)@VGS=10V Max(mΩ): 2900
VGS(TH) Min(V): 3
VGS(TH) Max(V): 5
Qg Typ(nC): 45
Ciss Typ(pF): 2333
Package: TO-247

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