Silicon N-Channel Power MOSFET 650V 4A

Silicon N-Channel Power MOSFET 650V 4A

Brand: AIMRSE

Catalog Number
AIMRSE-MOSFET-126
Category
MOSFET
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Description

General Description:
CS4N65 A8R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
 Fast Switching
 Low ON Resistance(Rdson≤2.8Ω)
 Low Gate Charge (Typical Data: 14.5nC)
 Low Reverse transfer capacitances(Typical:3.5pF)
 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.

Polarity: N
VDS(V): 650
ID(A): 4
RDS(ON)@VGS=10V Max(mΩ): 2800
VGS(TH) Min(V): 2
VGS(TH) Max(V): 4
Qg Typ(nC): 14.5
Ciss Typ(pF): 610
Package: TO-220

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