Silicon N-Channel Power MOSFET 800V 7A
Brand: AIMRSE
General Description:
CS7N80 A8R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
Fast Switching
Low ON Resistance(Rds on ≤ 1.8Ω)
Low Gate Charge (Typical Data: 33.9nC)
Low Reverse transfer capacitances(Typical:11.2pF)
100% Single Pulse avalanche energy Test
Applications:
Pow er switch circuit of adaptor and c harger.
| Polarity: | N |
| VDS(V): | 800 |
| ID(A): | 7 |
| RDS(ON)@VGS=10V Max(mΩ): | 1800 |
| VGS(TH) Min(V): | 2 |
| VGS(TH) Max(V): | 4 |
| Qg Typ(nC): | 33.9 |
| Ciss Typ(pF): | 1443 |
| Package: | TO-220 |
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