Silicon N-Channel Power MOSFET 900V 20A
Brand: AIMRSE
General Description:
CS20N90 AKRZ-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-247,
which accords with the RoHS standard..
Features:
Fast Switching
Low ON Resistance(Rdson≤0.40Ω)
Low Gate Charge (Typical Data: 140.5nC)
Low Reverse transfer capacitances(Typical: 18.3pF)
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Power switch circuit of electron ballast and adaptor.
| Polarity: | N |
| VDS(V): | 900 |
| ID(A): | 20 |
| RDS(ON)@VGS=10V Max(mΩ): | 400 |
| VGS(TH) Min(V): | 2 |
| VGS(TH) Max(V): | 4 |
| Qg Typ(nC): | 140.5 |
| Ciss Typ(pF): | 7904 |
| Package: | TO-247 |
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