Silicon N-Channel Power MOSFET 900V 6A

Silicon N-Channel Power MOSFET 900V 6A

Brand: AIMRSE

Catalog Number
AIMRSE-MOSFET-130
Category
MOSFET
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Description

General Description:
CS6N90 B4R-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features:
 Fast Switching
 Low ON Resistance(Rdson≤2.5Ω)
 Low Gate Charge (Typical Data: 30.1nC)
 Low Reverse transfer capacitances(Typical:6.4pF)
 100% Single Pulse avalanche energy Test
 Halogen Free
Applications:
Power switch circuit of adaptor and charger.

Polarity: N
VDS(V): 900
ID(A): 6
RDS(ON)@VGS=10V Max(mΩ): 2500
VGS(TH) Min(V): 2
VGS(TH) Max(V): 4
Qg Typ(nC): 30.1
Ciss Typ(pF): 1156
Package: TO-252

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