Silicon N-Channel Power MOSFET 900V
Brand: AIMRSE
General Description:
CS9N90 A8D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
Fast Switching
ESD Improved Capability
Low Gate Charge (Typical Data: 65nC)
Low Reverse transfer capacitances(Typical: 13pF)
100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of PC POWER.
| Polarity: | N |
| VDS(V): | 900 |
| ID(A): | 9 |
| RDS(ON)@VGS=10V Max(mΩ): | 1300 |
| VGS(TH) Min(V): | 2 |
| VGS(TH) Max(V): | 4 |
| Qg Typ(nC): | 65 |
| Ciss Typ(pF): | 3850 |
| Package: | TO-220 |
Contact Form