High Power Probe Station

Request a Quote

Catalog NO.: AIMRSE-PS-RF-8

High Power Probe Station

These are dedicated high power probe stations for characterizing high power devices on wafers over a wide temperature range (-60°C to +300°C). Voltage measurement ranges up to 3kV (triaxial)/10kV (coaxial) and current up to 600A. Shielded environment technology is employed for ultra-low noise measurements.

X
X
Product Highlights High-power device testing
Chuck Size Supports thin wafer or Taiko wafer testing
Temperature Range -60°C to +300°C
Vacuum / Chamber Shielded environment technology
Fixture Type Shielded environment technology
Key Features / Applications Voltage: 3kV (triaxial)/10kV (coaxial); Current: 600A; The fully automatic version supports automated wafer handling (150mm SiC, 200mm GaN, 300mm SiGe); Wafer loading platform technology

Contact Form

© AIMRSE. All Rights Reserved.