High Power

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Cat Products Name Product Highlights Price
AIMRSE-PS-H-1 Medium-Large High Voltage / High Current Probe Station T-V8 8-inch high-voltage test Request a Quote
AIMRSE-PS-H-2 8-inch Manual High Voltage Probe Station 8-inch HV manual test Request a Quote
AIMRSE-PS-H-3 Semi-Automatic High Voltage / High Current Probe Station 8-inch semi-auto HV test Request a Quote
AIMRSE-PS-H-4 Semi-Automatic High Voltage Probe Station 8-inch darkbox HV test Request a Quote
AIMRSE-PS-H-5 RF Probe Accessories DC–220GHz RF probes Request a Quote

Overview

Safe, Accurate Characterization of Wide‑Bandgap Power Devices: The transition to silicon carbide (SiC) and gallium nitride (GaN) power semiconductors demands test equipment capable of handling kilovolts and hundreds of amperes without compromising measurement accuracy or operator safety. At AIMRSE, we manufacture High‑Power Probe Stations engineered specifically for on‑wafer characterization of power diodes, MOSFETs, and HEMTs. Our systems integrate arc‑suppression technology, high‑current probe arms, and thermally managed chucks to enable safe, repeatable I‑V, breakdown, and switching loss measurements up to 10 kV and 500 A.

System Architecture & High‑Power Safety

High-power probe station with anti-arcing enclosure and heavy-duty probes Fig 1: AIMRSE high‑power probe station configured for SiC MOSFET and GaN HEMT characterization.

AIMRSE high‑power probe stations are built with operator safety as the primary design criterion. A fully interlocked safety enclosure prevents access during high‑voltage operation, while internal fluorinert vapor or dielectric gas environments suppress arcing and corona discharge. Heavy‑duty probe arms with triaxial guarding and Kelvin sensing deliver precise voltage and current measurements up to 10 kV and 500 A with minimal contact resistance. A high‑power thermal chuck maintains wafer temperature from ambient to 300 °C with uniform heat distribution, essential for characterizing temperature‑dependent on‑resistance and threshold voltage drift. Our systems are trusted for SiC MOSFET wafer‑level reliability, GaN HEMT dynamic RDS(on) testing, IGBT characterization, and high‑voltage diode reverse recovery analysis.

Available High‑Power Configurations

High‑Voltage Probe Stations (up to 10 kV)

Triaxial Guarding & Arc Suppression
Configured for breakdown voltage and leakage current testing. Dielectric fluid or gas environment prevents surface flashover. Ideal for power diode and capacitor characterization.

High‑Current Probe Stations (up to 500 A)

Kelvin Sensing & Low‑Resistance Contacts
Heavy‑duty probe tips and low‑impedance cabling for accurate on‑state voltage and RDS(on) measurements. Thermal chuck with active cooling for continuous high‑power operation.

Dynamic Switching Test Systems

Double‑Pulse & Continuous Switching
Integrated gate drivers and low‑inductance load boards for measuring switching losses, reverse recovery charge, and dynamic on‑resistance in GaN and SiC devices.

Wafer‑Level Reliability (WLR) Systems

HCI, NBTI, and TDDB Testing
Automated stress‑and‑measure sequences for long‑term reliability assessment. High‑temperature chucks and multiplexed probe cards for high‑throughput testing.

Core Engineering Advantages

Arc‑Suppression Environment

Our high‑voltage systems are equipped with an environmental enclosure that can be purged with dry nitrogen, SF₆, or fluorinert vapor. This increases the breakdown voltage of air by up to 3×, enabling safe operation at 10 kV without surface flashover.

Thermal Management for High Power

The thermal chuck is designed with high‑conductivity materials and active liquid cooling to dissipate up to 500 W of continuous power. This maintains stable junction temperature during RDS(on) and switching loss characterization.

Safety Interlock System

Category 4 safety interlocks prevent access to high‑voltage circuits when energized. Emergency stop, enclosure door sensors, and voltage‑present indicators ensure operator protection in accordance with SEMI S2 and IEC 61010 standards.

High‑Power Probing FAQ

What is the maximum voltage and current rating?
AIMRSE high‑power probe stations are rated for up to 10 kV and 500 A. The exact configuration depends on the probe arms, cabling, and safety environment selected. Custom ratings beyond these values are available upon request.
How do you prevent arcing at high voltages?
We employ a sealed environmental chamber that can be filled with dielectric gases (SF₆, dry N₂) or fluorinert vapor. This suppresses corona discharge and surface flashover, enabling safe operation at 10 kV. All high‑voltage cabling is triaxially guarded and shielded.
What sample sizes can be accommodated?
Standard systems accommodate wafers up to 200 mm. The chuck surface is gold‑plated for low contact resistance and uniform current distribution. Custom chucks for larger wafers or specific package types are available.
Is the system compatible with automated wafer probers?
Yes. AIMRSE high‑power stations can be configured for semi‑automatic operation with pattern recognition and automated wafer mapping. This is ideal for production‑level wafer‑level reliability (WLR) and process control monitoring (PCM).

Custom High‑Power Engineering Services

Ready to Specify Your High‑Power Probe Station?

From voltage and current ratings to dynamic switching and reliability test requirements, our applications team will engineer a high‑power probing solution that meets the demands of wide‑bandgap semiconductor characterization. Receive a full system quotation, safety compliance documentation, and 3D CAD model.

Please specify required voltage, current, wafer size, and whether dynamic switching or reliability testing is needed.

Note: All AIMRSE probe systems and components are designed exclusively for professional semiconductor R&D and industrial testing. Equipment must be operated by trained personnel in accordance with standard laboratory safety protocols.

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